IRG4BC10UPBF Description

IRG4BC10UPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 80 kHz in hard switching, and＞200 kHz in resonant mode. As a Generation 4 IGBT,  it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with Generation 3. The IRG4BC10UPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.

IRG4BC10UPBF Features

Industry-standard TO-22-AB packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available

Higher efficiency

IRG4BC10UPBF Applications

Industrial motor drive

Solar inverters

Welding