APT50GS60BRDLG

new-10%

Manufacturer part number:APT50GS60BRDLG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 93A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT50GS60BRDLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	415W
Element Configuration	Single
Input Type	Standard
Power - Max	415W
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	93A
Collector Emitter Breakdown Voltage	600V
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	93A
Test Condition	400V, 50A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic	3.15V @ 15V, 50A
IGBT Type	NPT
Gate Charge	235nC
Current - Collector Pulsed (Icm)	195A
Td (on/off) @ 25°C	16ns/225ns
Switching Energy	755μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant