IRGR3B60KD2PBF

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Manufacturer part number:IRGR3B60KD2PBF

Manufacturer:Infineon Technologies

Description:IRGR3B60KD2PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGR3B60KD2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	350.003213mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	52W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRGR3B60KD2PBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	22ns
Element Configuration	Single
Power Dissipation	52W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	7.8A
Reverse Recovery Time	77 ns
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.4V
Turn On Time	35 ns
Test Condition	400V, 3A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 3A
Turn Off Time-Nom (toff)	211 ns
IGBT Type	NPT
Gate Charge	13nC
Current - Collector Pulsed (Icm)	15.6A
Td (on/off) @ 25°C	18ns/110ns
Switching Energy	62μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	105ns
Height	1.2446mm
Length	6.7056mm
Width	6.223mm
Radiation Hardening	No
RoHS Status	RoHS Compliant