IXGT40N120B2D1

new-10%

Manufacturer part number:IXGT40N120B2D1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXGT40N120B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	PURE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	380W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*40N120
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	380W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	75A
Reverse Recovery Time	100 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	79 ns
Test Condition	960V, 40A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 40A
Turn Off Time-Nom (toff)	770 ns
IGBT Type	PT
Gate Charge	138nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	21ns/290ns
Switching Energy	4.5mJ (on), 3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	270ns
Height	5.1mm
Length	16.05mm
Width	14mm
RoHS Status	ROHS3 Compliant