NGTB25N120FLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB25N120FLWG Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
192W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Element Configuration
Single
Input Type
Standard
Turn On Delay Time
91 ns
Power - Max
192W
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
228 ns
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
Reverse Recovery Time
240 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2V
Test Condition
600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 25A
IGBT Type
Trench Field Stop
Gate Charge
220nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
91ns/228ns
Switching Energy
1.5mJ (on), 950μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
21.08mm
Length
16.26mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.384800
$6.3848
10
$6.023396
$60.23396
100
$5.682449
$568.2449
500
$5.360801
$2680.4005
1000
$5.057360
$5057.36
NGTB25N120FLWG Product Details
NGTB25N120FLWG Description
The NGTB25N120FLWG IGBT features a robust and cost-effective Trench construction and provides superior performance in demanding switching applications, offering lows on state voltage and minimal switching loss.
NGTB25N120FLWG Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation