Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NGTB50N60FL2WG

  • NGTB50N60FL2WG
  • NGTB50N60FL2WG

NGTB50N60FL2WG

NGTB50N60FL2WG

ON Semiconductor

NGTB50N60FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB50N60FL2WG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 417W
Element Configuration Single
Input Type Standard
Power - Max 417W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 100A
Reverse Recovery Time 94 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
IGBT Type Trench Field Stop
Gate Charge 220nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 100ns/237ns
Switching Energy 1.5mJ (on), 460μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.480269 $1.480269
10 $1.396480 $13.9648
100 $1.317434 $131.7434
500 $1.242862 $621.431
1000 $1.172512 $1172.512
NGTB50N60FL2WG Product Details

NGTB50N60FL2WG             Description

 

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.


NGTB50N60FL2WG                Features


? Extremely Efficient Trench with Field Stop Technology

? TJmax = 175°C

? Soft Fast Reverse Recovery Diode

? Optimized for High Speed Switching

? 5 s Short?Circuit Capability

? This is a Pb?Free Device

NGTB50N60FL2WG                   Applications

? Solar Inverters

? Uninterruptible Power Supplies (UPS)

? Welding

 


Related Part Number

IXGT40N120B2D1
IXYS
IXGT40N120B2D1
$0 $/piece
NGTB25N120FLWG
ON Semiconductor
NGTB25N120FLWG
$0 $/piece
IRGR3B60KD2PBF
Infineon Technologies
IRGR3B60KD2PBF
$0 $/piece
IRG4BC20SPBFXKMA1
Infineon Technologies
IRG4BC20SPBFXKMA1
$0 $/piece
IXGP15N120B
IXYS
IXGP15N120B
$0 $/piece
IKZ50N65NH5XKSA1
Infineon Technologies
IKZ50N65NH5XKSA1
$0 $/piece
IRGB30B60KPBF
Infineon Technologies
IRGB30B60KPBF
$0 $/piece
HGT1S20N60A4S9A
ON Semiconductor
HGT1S20N60A4S9A
$0 $/piece
SGW30N60HSFKSA1
Rochester Electronics, LLC
SGW30N60HSFKSA1
$0 $/piece
IXGA16N60C2D1
IXYS
IXGA16N60C2D1
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News