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IRGP30B120KD-EP

  • IRGP30B120KD-EP
  • IRGP30B120KD-EP

IRGP30B120KD-EP

IRGP30B120KD-EP

Infineon Technologies

IRGP30B120KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP30B120KD-EP Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AD
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Max Power Dissipation 300W
Current Rating 60A
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Turn On Delay Time 50 ns
Power - Max 300W
Rise Time 25ns
Turn-Off Delay Time 210 ns
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 60A
Reverse Recovery Time 300 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 60A
Collector Emitter Saturation Voltage 2.28V
Test Condition 600V, 25A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 60A
IGBT Type NPT
Gate Charge 169nC
Current - Collector Pulsed (Icm) 120A
Switching Energy 1.07mJ (on), 1.49mJ (off)
Height 18.7mm
Length 15.6972mm
Width 5.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.84000 $11.84
25 $10.19680 $254.92
100 $8.85380 $885.38
500 $7.70980 $3854.9
1,000 $6.71498 $6.71498
IRGP30B120KD-EP Product Details

IRGP30B120KD-EP Description


IRGP30B120KD-EP is a 1200v Insulated gate bipolar transistor with an Ultrafast soft recovery diode. The Infineon IRGP30B120KD-EP can be applied in Automotive, Advanced driver assistance systems (ADAS), Enterprise systems, Enterprise projectors, Personal electronics, and Home theater & entertainment applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP30B120KD-EP is in the TO-247AD package with 38W power dissipation. 



IRGP30B120KD-EP Features


Low VcE(on) Non-Punch Through (NPT) Technology

Low Diode VF (1.76V Typical @ 25A & 25°C)

10 μs Short Circuit Capability

Square RBSOA

Ultrasoft Diode Recovery Characteristics

Positive Vce(on) Temperature Coefficient

Extended Lead TO-247AD Package

Lead-Free



IRGP30B120KD-EP Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Home theater & entertainment 


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