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IRG4BC20KD-STRR

IRG4BC20KD-STRR

IRG4BC20KD-STRR

Infineon Technologies

IRG4BC20KD-STRR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20KD-STRR Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN
Additional Feature ULTRA FAST SOFT RECOVERY
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Turn On Time 88 ns
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 34nC
Current - Collector Pulsed (Icm) 32A
Td (on/off) @ 25°C 54ns/180ns
Switching Energy 340μJ (on), 300μJ (off)
RoHS Status Non-RoHS Compliant
IRG4BC20KD-STRR Product Details

IRG4BC20KD-STRR Description


BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE



IRG4BC20KD-STRR Features


  • Compared to earlier generations, the Generation 4 IGBT design offers tighter parameter dispersion and greater efficiency.

  • For usage in bridge designs, IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes.

  • D2Pak packaging, an industry standard

  • Leap Free



IRG4BC20KD-STRR Applications


Switching applications


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