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FGH30S150P

FGH30S150P

FGH30S150P

ON Semiconductor

FGH30S150P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH30S150P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 500W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 60A
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 1.5kV
Voltage - Collector Emitter Breakdown (Max) 1500V
Turn On Time 372 ns
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 1080 ns
Gate Charge 369nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 32ns/492ns
Switching Energy 1.16mJ (on), 900μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.66000 $6.66
10 $6.00200 $60.02
450 $4.71133 $2120.0985
900 $4.24890 $3824.01
1,350 $3.61608 $3.61608
FGH30S150P Product Details

FGH30S150P Description


FGH30S150P, using advanced field stop trench and shorted?anode technology, ON Semiconductor’s shorted?anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.



FGH30S150P Features


  • High Speed Switching

  • Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A

  • High Input Impedance

  • Pb?Free and RoHS Compliant

  • Max Power Dissipation: 500 W

  • Max Collector Current: 60 A

  • Turn On Time: 372 ns

  • ROHS3 Compliant



FGH30S150P Applications


  • Power Control

  • Induction Heating

  • Microwave Oven

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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