IRG4BC40K

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Manufacturer part number:IRG4BC40K

Manufacturer:Infineon Technologies

Description:IRG4BC40K datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC40K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	ULTRA FAST
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	160W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-220AB
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	42A
Turn On Time	48 ns
Test Condition	480V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 25A
Turn Off Time-Nom (toff)	340 ns
Gate Charge	120nC
Current - Collector Pulsed (Icm)	84A
Td (on/off) @ 25°C	30ns/140ns
Switching Energy	620μJ (on), 330μJ (off)
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
200	$2.81530	$563.06

IRG4BC40K Description

IRG4BC40K IGBT driver high-voltage, MOSFET with high-speed and IGBT driver that has high and low side referenced output channels that depend on one another. IRG4BC40K MOSFET is able for driving a high side power MOSFET or an IGBT that operates between 10 to 600 voltages. IRG4BC40K ON Semiconductor half-bridge driver for gate drivers can be employed in a range of applications, ranging from isolated energy supply units that require an extremely high power density and efficiency, to solar inverters that require a high isolation voltage and long-term reliability.