IRG4BC20UDSTRRP

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Manufacturer part number:IRG4BC20UDSTRRP

Manufacturer:Infineon Technologies

Description:IRG4BC20UDSTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC20UDSTRRP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	260.39037mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	60W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	60W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	13A
Reverse Recovery Time	37 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	55 ns
Test Condition	480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff)	320 ns
Gate Charge	27nC
Current - Collector Pulsed (Icm)	52A
Td (on/off) @ 25°C	39ns/93ns
Switching Energy	160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	170ns
Radiation Hardening	No
RoHS Status	RoHS Compliant