IRG4PC60FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PC60FPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
FAST
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
520W
Current Rating
90A
Number of Elements
1
Element Configuration
Single
Power Dissipation
520W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
42 ns
Transistor Application
POWER CONTROL
Rise Time
39ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
310 ns
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
90A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
105 ns
Test Condition
480V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 60A
Turn Off Time-Nom (toff)
770 ns
Gate Charge
290nC
Current - Collector Pulsed (Icm)
360A
Td (on/off) @ 25°C
42ns/310ns
Switching Energy
300μJ (on), 4.6mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.831920
$6.83192
10
$6.445208
$64.45208
100
$6.080384
$608.0384
500
$5.736212
$2868.106
1000
$5.411521
$5411.521
IRG4PC60FPBF Product Details
IRG4PC60FPBF Features
·Fast Optimized for medium operating frequencies( 1-5 kHz in hard switching,>20 kHz in resonant mode). ·Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. ·Industry standard TO-247AC package ·Lead-Free
IRG4PC60FPBF Description
IRG4PC60FPBF is a insulated gate bipolar transistor.The generation 4 IGBT's offer highest efficiency available.IGBT's optimized for specified application conditions . The device is designed for best performance when used with IR Hexfred &IR Fred companion diodes.
STM32F072CBU6 Features
? Core: Arm? 32-bit Cortex?-M0 CPU, frequency up to 48 MHz ? Memories – 64 to 128 Kbytes of Flash memory – 16 Kbytes of SRAM with HW parity ? CRC calculation unit ? Reset and power management ? Clock management ? Up to 87 fast I/Os ? 7-channel DMA controller
?HDMI CEC wakeup on header reception ? Serial wire debug (SWD) ? 96-bit unique ID ? All packages ECOPACK?2