IRG4BC30F-STRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC30F-STRLP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Weight
260.39037mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Base Part Number
IRG4BC30F-SPBF
Element Configuration
Single
Input Type
Standard
Power - Max
100W
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
31A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
31A
Max Breakdown Voltage
600V
Test Condition
480V, 17A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 17A
Gate Charge
51nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
21ns/200ns
Switching Energy
230μJ (on), 1.18mJ (off)
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.675394
$1.675394
10
$1.580560
$15.8056
100
$1.491094
$149.1094
500
$1.406693
$703.3465
1000
$1.327069
$1327.069
IRG4BC30F-STRLP Product Details
IRG4BC30F-STRLP Description
IRG4BC30F-STRLP transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4BC30F-STRLP MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4BC30F-STRLP has the common source configuration.