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IRG4BC30FDSTRRP

IRG4BC30FDSTRRP

IRG4BC30FDSTRRP

Infineon Technologies

IRG4BC30FDSTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30FDSTRRP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e3
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation100W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage600V
Turn On Time69 ns
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 620 ns
Gate Charge51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2047 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.687181$3.687181
10$3.478472$34.78472
100$3.281578$328.1578
500$3.095828$1547.914
1000$2.920592$2920.592

IRG4BC30FDSTRRP Product Details

IRG4BC30FDSTRRP Description

An IGBT power module functions as a switch and can be used to switch electrical power on and off extremely fast and with high energy efficiency. The IGBT power module is becoming the preferred device for high power applications due to its ability to enhance switching, temperature, weight and cost performance.




IRG4BC30FDSTRRP Features


.Fast: optimized for medium operating frequencies

(1-5 kHz in hard switching.>20kHzin resonant mode)·Generation 41GBT design provides tighter

parameter distribution and higher efficiency than Generation3

·lGBT co-packaged with HEXFREDTMultrafastultra-soft

recovery anti-parallel diodes for use in bridge configurations

Lead-Free

IRG4BC30FDSTRRP APPLICATIONS


· Intel ? VR12 & AMD? SVI & PVI based systems

· DDR Memory with Vtt tracking

· Overclocked & Gaming platforms


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