IRG4BC30FDSTRRP

new-10%

Manufacturer part number:IRG4BC30FDSTRRP

Manufacturer:Infineon Technologies

Description:IRG4BC30FDSTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30FDSTRRP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	260.39037mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	31A
Reverse Recovery Time	42 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	69 ns
Test Condition	480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 17A
Turn Off Time-Nom (toff)	620 ns
Gate Charge	51nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	42ns/230ns
Switching Energy	630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$3.687181	$3.687181
10	$3.478472	$34.78472
100	$3.281578	$328.1578
500	$3.095828	$1547.914
1000	$2.920592	$2920.592

IRG4BC30FDSTRRP Description

An IGBT power module functions as a switch and can be used to switch electrical power on and off extremely fast and with high energy efficiency. The IGBT power module is becoming the preferred device for high power applications due to its ability to enhance switching, temperature, weight and cost performance.

IRG4BC30FDSTRRP Features

.Fast: optimized for medium operating frequencies

(1-5 kHz in hard switching.>20kHzin resonant mode)·Generation 41GBT design provides tighter

parameter distribution and higher efficiency than Generation3

·lGBT co-packaged with HEXFREDTMultrafastultra-soft

recovery anti-parallel diodes for use in bridge configurations

Lead-Free