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IXGH16N60C2D1

IXGH16N60C2D1

IXGH16N60C2D1

IXYS

IGBT 600V 40A 150W TO247

SOT-23

IXGH16N60C2D1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series HiPerFAST™
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Base Part Number IXG*16N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 60 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 30 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 43 ns
Test Condition 400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 12A
Turn Off Time-Nom (toff) 190 ns
IGBT Type PT
Gate Charge 25nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 16ns/75ns
Switching Energy 160μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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