STGB3NB60KDT4

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Manufacturer part number:STGB3NB60KDT4

Manufacturer:STMicroelectronics

Description:STGB3NB60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB3NB60KDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	50W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB3
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	50W
Input Type	Standard
Transistor Application	POWER CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	10A
Reverse Recovery Time	45ns
Continuous Drain Current (ID)	6A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Turn On Time	19 ns
Test Condition	480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Turn Off Time-Nom (toff)	220 ns
Gate Charge	14nC
Current - Collector Pulsed (Icm)	24A
Td (on/off) @ 25°C	14ns/33ns
Switching Energy	30μJ (on), 58μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free