STGB14NC60KT4

new-10%

Manufacturer part number:STGB14NC60KT4

Manufacturer:STMicroelectronics

Description:STGB14NC60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB14NC60KT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	80W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB14
Pin Count	3
JESD-30 Code	R-PDSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	80W
Input Type	Standard
Turn On Delay Time	22.5 ns
Transistor Application	POWER CONTROL
Rise Time	8.5ns
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	116 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	25A
Continuous Drain Current (ID)	25A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Max Breakdown Voltage	600V
Turn On Time	31.5 ns
Test Condition	390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 7A
Turn Off Time-Nom (toff)	340 ns
Gate Charge	34.4nC
Td (on/off) @ 25°C	22.5ns/116ns
Switching Energy	82μJ (on), 155μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free