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IRG4BC30K-STRLP

IRG4BC30K-STRLP

IRG4BC30K-STRLP

Infineon Technologies

IRG4BC30K-STRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30K-STRLP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2010
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Max Power Dissipation100W
Base Part Number IRG4BC30K-SPBF
Element ConfigurationSingle
Input Type Standard
Power - Max 100W
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Collector Emitter Breakdown Voltage600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 28A
Max Breakdown Voltage 600V
Test Condition 480V, 16A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Gate Charge67nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 26ns/130ns
Switching Energy 360μJ (on), 510μJ (off)
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1511 items

IRG4BC30K-STRLP Product Details

IRG4BC30K-STRLP Description


GATE BIPOLAR TRANSISTOR WITH INSULATION



IRG4BC30K-STRLP Features


  • Combining high switching speed and reduced conduction losses

  • Compared to earlier generations, the most recent design offers tighter parameter distribution and more efficiency.



IRG4BC30K-STRLP Applications


Switching applications


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