IRG4BC30U-S Description
IRG4BC30U-S is a kind of insulated gate bipolar transistor (IGBT) with ultrafast, ultra-soft-recovery anti-parallel diode, which is designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. It is optimized for high operating frequencies 8-40 kHz in hard switching, and>200 kHz in resonant mode. As a generation-4 IGBT, It offers tighter parameter distribution and higher efficiency than generation 3. It is co-packaged with HEXFRED? diode for use in bridge configurations.
IRG4BC30U-S Features
Tighter parameter distribution
Higher efficiency
Industry-standard D2Pak package
High operating frequencies 8-40 kHz
IRG4BC30U-S Applications
AC motors
Lighting circuits
Traction drives
Frequency converters
Switching power supplies
