STGY40NC60VD

new-10%

Manufacturer part number:STGY40NC60VD

Manufacturer:STMicroelectronics

Description:STGY40NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGY40NC60VD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	260W
Current Rating	50A
Base Part Number	STGY40
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	260W
Input Type	Standard
Turn On Delay Time	43 ns
Transistor Application	POWER CONTROL
Rise Time	19ns
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	170 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	44ns
Continuous Drain Current (ID)	50A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	61 ns
Test Condition	390V, 40A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	247 ns
Gate Charge	214nC
Td (on/off) @ 25°C	43ns/140ns
Switching Energy	330μJ (on), 720μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.3mm
Length	15.9mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free