IRG7PH35UD1PBF

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Manufacturer part number:IRG7PH35UD1PBF

Manufacturer:Infineon Technologies

Description:IRG7PH35UD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH35UD1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Reach Compliance Code	compliant
Base Part Number	IRG7PH35
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	179W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Power Dissipation-Max (Abs)	179W
Test Condition	600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
Turn Off Time-Nom (toff)	400 ns
IGBT Type	Trench
Gate Charge	85nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	-/160ns
Switching Energy	620μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	105ns
RoHS Status	RoHS Compliant