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IRGP6640D-EPBF

  • IRGP6640D-EPBF
  • IRGP6640D-EPBF

IRGP6640D-EPBF

IRGP6640D-EPBF

Infineon Technologies

IRGP6640D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP6640D-EPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 200W
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 53A
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Gate Charge 50nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 40ns/100ns
Switching Energy 90μJ (on), 600μJ (off)
RoHS Status RoHS Compliant
IRGP6640D-EPBF Product Details

IRGP6640D-EPBF Description


IRGP6640D-EPBF is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of the IRGP6640D-EPBF is -40°C~175°C TJ and its maximum power dissipation are 200W. IRGP6640D-EPBF has 3 pins and it is available in Tube packaging way. The Collector-Emitter Voltage (VCEO) of IRGP6640D-EPBF is 1.95V.



IRGP6640D-EPBF Features


  • Switching Energy: 90μJ (on), 600μJ (off)

  • Current - Collector Pulsed (Icm): 72A

  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A

  • Collector-Emitter Saturation Voltage: 1.65V

  • Reverse Recovery Time: 70 ns



IRGP6640D-EPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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