IXGT64N60B3

new-10%

Manufacturer part number:IXGT64N60B3

Manufacturer:IXYS

Description:DISC IGBT PT-MID FREQUENCY TO-26

Case Package:SOT-23

Datasheet:IXGT64N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	460W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	41ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	64A
Power Dissipation-Max (Abs)	460W
Turn On Time	64 ns
Test Condition	480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 50A
Turn Off Time-Nom (toff)	326 ns
IGBT Type	PT
Gate Charge	168nC
Current - Collector Pulsed (Icm)	400A
Td (on/off) @ 25°C	25ns/138ns
Switching Energy	1.5mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	150ns
RoHS Status	RoHS Compliant