IXGL200N60B3

new-10%

Manufacturer part number:IXGL200N60B3

Manufacturer:IXYS

Description:IGBT 600V 150A 400W ISOPLUS264

Case Package:SOT-23

Datasheet:IXGL200N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS264™
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	400W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*200N60
JESD-30 Code	R-PSIP-T5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	ISOLATED
Input Type	Standard
Power - Max	400W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.5V
Max Collector Current	150A
Collector Emitter Breakdown Voltage	600V
Turn On Time	122 ns
Test Condition	300V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 100A
Turn Off Time-Nom (toff)	730 ns
IGBT Type	PT
Gate Charge	750nC
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	44ns/310ns
Switching Energy	1.6mJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	300ns
RoHS Status	ROHS3 Compliant