SIGC10T60EX1SA5

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Manufacturer part number:SIGC10T60EX1SA5

Manufacturer:Infineon Technologies

Description:SIGC10T60EX1SA5 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SIGC10T60EX1SA5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2010
Series	TrenchStop™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Position	UPPER
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUUC-N2
Number of Elements	1
Configuration	SINGLE
Input Type	Standard
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Dual Supply Voltage	600V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 20A
IGBT Type	Trench Field Stop
Current - Collector Pulsed (Icm)	60A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SIGC10T60EX1SA5 Description

SIGC10T60EX1SA5 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC10T60EX1SA5 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC10T60EX1SA5 has the common source configuration.

SIGC10T60EX1SA5 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC10T60EX1SA5 Applications

ISM applications

DC large signal applications

Power factor correction