IXSH30N60C

new-10%

Manufacturer part number:IXSH30N60C

Manufacturer:IXYS

Description:IGBT 600V 55A 200W TO247AD

Case Package:SOT-23

Datasheet:IXSH30N60C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*30N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	30 ns
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	90 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	55A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	70 ns
Test Condition	480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Turn Off Time-Nom (toff)	290 ns
IGBT Type	PT
Gate Charge	100nC
Current - Collector Pulsed (Icm)	110A
Td (on/off) @ 25°C	30ns/90ns
Switching Energy	700μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	120ns
RoHS Status	RoHS Compliant
Lead Free	Lead Free