NGD18N40CLBT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGD18N40CLBT4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn80Pb20)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
400V
Max Power Dissipation
115W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
18A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
NG*18N40CL
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation
115W
Case Connection
COLLECTOR
Input Type
Logic
Transistor Application
AUTOMOTIVE IGNITION
Rise Time
4.5ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
15A
Collector Emitter Breakdown Voltage
430V
Turn On Time
5200 ns
Vce(on) (Max) @ Vge, Ic
2.5V @ 4V, 15A
Turn Off Time-Nom (toff)
13000 ns
Current - Collector Pulsed (Icm)
50A
Gate-Emitter Voltage-Max
18V
Gate-Emitter Thr Voltage-Max
1.9V
Fall Time-Max (tf)
15000ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.121440
$5.12144
10
$4.831547
$48.31547
100
$4.558063
$455.8063
500
$4.300060
$2150.03
1000
$4.056660
$4056.66
NGD18N40CLBT4 Product Details
NGD18N40CLBT4 Description
NGD18N40CLBT4 is a 400v Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGD18N40CLBT4 is in the DPAK package with 115W power dissipation.
NGD18N40CLBT4 Features
Ideal for Coil-on-Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate- Emitter ESD Protection
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
Low Threshold Voltage Interfaces Power Roads to Logic or Microprocessor Devices