IRG4BC30W-SPBF

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IRG4BC30W-SPBF

Manufacturer part number:IRG4BC30W-SPBF

Manufacturer:Infineon Technologies

Description:IRG4BC30W-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30W-SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1998
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	100W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	23A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRG4BC30W-SPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Dual
Power Dissipation	100W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	16ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	23A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	41 ns
Test Condition	480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Turn Off Time-Nom (toff)	300 ns
Gate Charge	51nC
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	25ns/99ns
Switching Energy	130μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	100ns
Height	4.83mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead, Lead Free