RJH60F4DPQ-A0#T0

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Manufacturer part number:RJH60F4DPQ-A0#T0

Manufacturer:Renesas Electronics America

Description:IGBT 600V 60A 235.8W TO247A

Case Package:SOT-23

Datasheet:RJH60F4DPQ-A0#T0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Published	2007
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	235.8W
Base Part Number	RJH60F
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	235.8W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	90 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	195 ns
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.82V @ 15V, 30A
Turn Off Time-Nom (toff)	165 ns
IGBT Type	Trench
Td (on/off) @ 25°C	45ns/85ns
Gate-Emitter Thr Voltage-Max	8V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant