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IRGS6B60KPBF

IRGS6B60KPBF

IRGS6B60KPBF

Infineon Technologies

IRGS6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS6B60KPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 90W
Terminal Form GULL WING
Current Rating 13A
Base Part Number IRGS6B60KPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 13A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 45 ns
Test Condition 400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge 18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
Height 4.703mm
Length 10.67mm
Width 9.652mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.229040 $5.22904
10 $4.933057 $49.33057
100 $4.653827 $465.3827
500 $4.390403 $2195.2015
1000 $4.141889 $4141.889
IRGS6B60KPBF Product Details

IRGS6B60KPBF Description


IRGS6B60KPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGS6B60KPBF IGBT delivers rugged transient performance and low EMI.



IRGS6B60KPBF Features


Low diode VF

10μs short circuit capability

Square RBSOA

Ultrasoft diode reverse recovery characteristics

Positive VCE (on) temperature coefficient



IRGS6B60KPBF Applications


UPS

Motor control


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