STGP12NB60K

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Manufacturer part number:STGP12NB60K

Manufacturer:STMicroelectronics

Description:STGP12NB60K datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP12NB60K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	125W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	18A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGP12
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	30A
Continuous Drain Current (ID)	18A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Turn On Time	39.5 ns
Test Condition	480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 12A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	54nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	25ns/96ns
Switching Energy	258μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free