IRG4CC50UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4CC50UB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Bulk
Published
2017
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
ULTRA FAST SPEED
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
O-XUUC-N
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
55A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 10A
Gate-Emitter Thr Voltage-Max
6V
RoHS Status
Non-RoHS Compliant
IRG4CC50UB Product Details
IRG4CC50UB Description
IRG4CC50UB is a type of N-channel IGBT developed by ON Semiconductor. It integrates the advantages of the high input impedance of MOSFET and the low turn-on voltage drop of GTR. TIG074E8-TL-H IGBT, as a new type of power semiconductor field-controlled self-shutdown device, integrates the high-speed performance of power MOSFET and the low resistance of bipolar devices. It has high input impedance, low voltage control power consumption, simple control circuit, high voltage resistance, large current capacity, and other characteristics, therefore, it has been widely used in various power conversions.