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IRG4CC50UB

IRG4CC50UB

IRG4CC50UB

Infineon Technologies

IRG4CC50UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4CC50UB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Packaging Bulk
Published 2017
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature ULTRA FAST SPEED
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-XUUC-N
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 55A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Gate-Emitter Thr Voltage-Max 6V
RoHS Status Non-RoHS Compliant
IRG4CC50UB Product Details

IRG4CC50UB Description


IRG4CC50UB is a type of N-channel IGBT developed by ON Semiconductor. It integrates the advantages of the high input impedance of MOSFET and the low turn-on voltage drop of GTR. TIG074E8-TL-H IGBT, as a new type of power semiconductor field-controlled self-shutdown device, integrates the high-speed performance of power MOSFET and the low resistance of bipolar devices. It has high input impedance, low voltage control power consumption, simple control circuit, high voltage resistance, large current capacity, and other characteristics, therefore, it has been widely used in various power conversions.



IRG4CC50UB Features


Low-saturation voltage

Low voltage drive

Built-in gate to emitter protection diode

Enhancement type

DV/DT guarantee



IRG4CC50UB Applications


Light-controlling flash applications


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