Welcome to Hotenda.com Online Store!

logo
userjoin
Home

GT60N321(Q)

  • GT60N321(Q)
  • GT60N321(Q)

GT60N321(Q)

GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

SOT-23

GT60N321(Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3PL
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number GT60
Input Type Standard
Power - Max 170W
Reverse Recovery Time 2.5μs
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 60A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 330ns/700ns

Related Part Number

IGC10T65U8QX1SA1
Infineon Technologies
IGC10T65U8QX1SA1
$0 $/piece
IRGC75B60UB
Infineon Technologies
IRGC75B60UB
$0 $/piece
IRGC15B60KD
Infineon Technologies
IRGC15B60KD
$0 $/piece
XGB8206ATI
Littelfuse Inc.
XGB8206ATI
$0 $/piece
LGD8209TI
Littelfuse Inc.
LGD8209TI
$0 $/piece
IRG7PK42UD1MPBF
Infineon Technologies
IRG7PK42UD1MPBF
$0 $/piece
SIGC25T60UNX1SA3
Infineon Technologies
SIGC25T60UNX1SA3
$0 $/piece
NGTB75N65FL2WAG
ON Semiconductor
NGTB75N65FL2WAG
$0 $/piece
APT30GP60LDLG
Microsemi Corporation
APT30GP60LDLG
$0 $/piece
NGTD20T120F2SWK
ON Semiconductor
NGTD20T120F2SWK
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News