IRG7PK42UD1MPBF Description

GATE BIPOLAR TRANSISTOR WITH INSULATION

IRG7PK42UD1MPBF Features

?IGBT technology with low Vce(ON)trench

? Minimal switching costs

? Round RBSOA

? Every piece that was tested for S1

? VCE (On)temperature co-efficient in the positive

? A narrow parameter distribution

? Package free of lead

IRG7PK42UD1MPBF Applications

• UPS.

• Welding

• Sun Inverter

• Electric heating