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IGC10T65U8QX1SA1

IGC10T65U8QX1SA1

IGC10T65U8QX1SA1

Infineon Technologies

IGC10T65U8QX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGC10T65U8QX1SA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
IGC10T65U8QX1SA1 Product Details

IGC10T65U8QX1SA1 Description


IGC10T65U8QX1SA1 is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of IGC10T65U8QX1SA1 is -55°C~175°C TJ and its maximum power dissipation is 250W. IGC10T65U8QX1SA1 has 3 pins and it is available in Tube (TR) packaging way. The Collector-Emitter Saturation Voltage of IGC10T65U8QX1SA1 is 2.04V.



IGC10T65U8QX1SA1 Features


  • Part Status: Active

  • RoHS Status: ROHS3 Compliant

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)



IGC10T65U8QX1SA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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