IRGC15B60KD Description

Fast Recovery Diode technology invented by Infineon is called Emitter Controlled-Diode. The Emitter Controlled-Diode from Infineon is best suited for consumer and industrial applications because it lowers the turn-on losses of the IGBT with soft recovery thanks to its ultrathin wafer and field-stop technology. It is designed to work best with Infineon IGBT technology.

IRGC15B60KD Features

• Voltage - Collector Emitter Breakdown (Max): 600V

• Reverse Recovery Time: 130ns

• Current - Collector (Ic) (Max): 15A

• Supplier Device Package: Die

IRGC15B60KD Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial