IRG4IBC30KD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4IBC30KD Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
ULTRA FAST SOFT RECOVERY
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
ISOLATED
Input Type
Standard
Power - Max
45W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
42ns
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
17A
Turn On Time
100 ns
Test Condition
480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 16A
Turn Off Time-Nom (toff)
370 ns
Gate Charge
67nC
Current - Collector Pulsed (Icm)
34A
Td (on/off) @ 25°C
60ns/160ns
Switching Energy
600μJ (on), 580μJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
200
$3.15315
$630.63
IRG4IBC30KD Product Details
IRG4IBC30KD Description
IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.
IRG4IBC30KD Features
High switching speed optimized for up to 25kHz
with low VCE(on)
? Short Circuit Rating 10μs @ 125°C, VGE = 15V
? Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
? IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in