IXGH60N60

new-10%

Manufacturer part number:IXGH60N60

Manufacturer:IXYS

Description:IGBT 600V 75A 300W TO247AD

Case Package:SOT-23

Datasheet:IXGH60N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2000
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	300W
Current Rating	75A
Base Part Number	IXG*60N60
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	300W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	50 ns
Transistor Application	POWER CONTROL
Rise Time	25ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	30 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	75 ns
Test Condition	480V, 60A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 60A
Turn Off Time-Nom (toff)	1200 ns
IGBT Type	PT
Gate Charge	130nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	50ns/300ns
Switching Energy	8mJ (off)
Gate-Emitter Voltage-Max	20V
VCEsat-Max	1.8 V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free