SIGC76T60R3EX1SA1 Description

The SIGC76T60R3EX1SA1 is a TRENCHSTOP? IGBT3 Chip. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).

SIGC76T60R3EX1SA1 Features

• Short tail current

• Positive temperature coefficient

• Easy paralleling

• 600V trench & field stop technology

• Low VCEsat

• Low turn-off losses

SIGC76T60R3EX1SA1 Applications

• Drives

• White goods

• Resonant applications

• AC and DC motor drives

• Solar inverters