IRG4BC20K-STRLP Description

The IRG4BC20K-STRLP is a single IGBT. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.

IRG4BC20K-STRLP Features

• Combines low conduction losses with high switching speed

• Latest generation design provides tighter parameter distribution and higher efficiency than previous generations

• High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V

• As a Freewheeling Diode we recommend our HEXFRED? ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT

• Latest generation 4 IGBTs offer highest power density motor controls possible

IRG4BC20K-STRLP Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.