IKB20N60TAATMA1 Description

The IKB20N60TAATMA1 is a Low Loss DuoPack: IGBT in TrenchStop? and Fieldstop technology with a soft, fast recovery anti-parallel diode. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.

IKB20N60TAATMA1 Features

• Positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

• Green Package

• Automotive AEC Q101 qualified

• Designed for DC/AC converters for Automotive Application

• Very low VCE(sat) 1.5V (typ.)

• Maximum Junction Temperature 150°C

• Short circuit withstand time 5μs

• TRENCHSTOP? and Fieldstop technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

IKB20N60TAATMA1 Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.