IRG4PC40UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PC40UD-EPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1998
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
160W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
42ns
JEDEC-95 Code
TO-247AD
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Turn On Time
92 ns
Test Condition
480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 20A
Turn Off Time-Nom (toff)
330 ns
Gate Charge
100nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
54ns/110ns
Switching Energy
710μJ (on), 350μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.45000
$6.45
10
$5.79700
$57.97
100
$4.74940
$474.94
500
$4.04306
$2021.53
IRG4PC40UD-EPBF Product Details
IRG4PC40UD-EPBF Description
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode: IRG4PC40UD-EPBF. It is designed to operate at frequencies between 8 and 40 kHz in hard switching mode and above 200 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design offers tighter parameter dispersion and greater efficiency. For usage in bridge designs, the IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. IGBT performance has been enhanced for the HEXFREDTM diodes. Less or no snubbing is needed for recovery characteristics with a minimum.
IRG4PC40UD-EPBF Features
Optimized for specific application conditions
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs