Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRG4PC40UD-EPBF

IRG4PC40UD-EPBF

IRG4PC40UD-EPBF

Infineon Technologies

IRG4PC40UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC40UD-EPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 160W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 42ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 40A
Turn On Time 92 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Turn Off Time-Nom (toff) 330 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 54ns/110ns
Switching Energy 710μJ (on), 350μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.45000 $6.45
10 $5.79700 $57.97
100 $4.74940 $474.94
500 $4.04306 $2021.53
IRG4PC40UD-EPBF Product Details

IRG4PC40UD-EPBF Description


Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode: IRG4PC40UD-EPBF. It is designed to operate at frequencies between 8 and 40 kHz in hard switching mode and above 200 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design offers tighter parameter dispersion and greater efficiency. For usage in bridge designs, the IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. IGBT performance has been enhanced for the HEXFREDTM diodes. Less or no snubbing is needed for recovery characteristics with a minimum.



IRG4PC40UD-EPBF Features


  • Optimized for specific application conditions

  • Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs



IRG4PC40UD-EPBF Applications


  • Alternative Energy

  • Power Management

  • Maintenance & Repair


Related Part Number

IXGX55N120A3D1
IXGX55N120A3D1
$0 $/piece
IXGT50N90B2
IXGT50N90B2
$0 $/piece
IXGR50N60C2D1
IXGR50N60C2D1
$0 $/piece
IXGH20N120IH
IXGH20N120IH
$0 $/piece
IXSH24N60B
IXSH24N60B
$0 $/piece
IRG7PH50U-EP

Get Subscriber

Enter Your Email Address, Get the Latest News