Name: IRG4PC40UD-EPBF
Brand: Infineon Technologies
SKU: IRG4PC40UD-EPBF
Availability: InStock

new-10%

IRG4PC40UD-EPBF

Manufacturer part number:IRG4PC40UD-EPBF

Manufacturer:Infineon Technologies

Description:IRG4PC40UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PC40UD-EPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1998
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	160W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	42ns
JEDEC-95 Code	TO-247AD
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Turn On Time	92 ns
Test Condition	480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 20A
Turn Off Time-Nom (toff)	330 ns
Gate Charge	100nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	54ns/110ns
Switching Energy	710μJ (on), 350μJ (off)
RoHS Status	ROHS3 Compliant

IRG4PC40UD-EPBF Product Details

IRG4PC40UD-EPBF Description

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode: IRG4PC40UD-EPBF. It is designed to operate at frequencies between 8 and 40 kHz in hard switching mode and above 200 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design offers tighter parameter dispersion and greater efficiency. For usage in bridge designs, the IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes. IGBT performance has been enhanced for the HEXFREDTM diodes. Less or no snubbing is needed for recovery characteristics with a minimum.