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IRGP30B120KDPBF

IRGP30B120KDPBF

IRGP30B120KDPBF

Infineon Technologies

IRGP30B120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP30B120KDPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 300W
Element Configuration Single
Power Dissipation 300W
Input Type Standard
Power - Max 300W
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 60A
Reverse Recovery Time 300ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 60A
Collector Emitter Saturation Voltage 2.28V
Test Condition 600V, 25A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 60A
IGBT Type NPT
Gate Charge 169nC
Current - Collector Pulsed (Icm) 120A
Switching Energy 1.07mJ (on), 1.49mJ (off)
Height 20.701mm
Length 15.875mm
Width 5.3086mm
Radiation Hardening No
RoHS Status RoHS Compliant
IRGP30B120KDPBF Product Details

IRGP30B120KDPBF Description

 

IRGP30B120KDPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP30B120KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

IRGP30B120KDPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRGP30B120KDPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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