IRGP30B120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP30B120KDPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Supplier Device Package
TO-247AC
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1999
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Element Configuration
Single
Power Dissipation
300W
Input Type
Standard
Power - Max
300W
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
60A
Reverse Recovery Time
300ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
60A
Collector Emitter Saturation Voltage
2.28V
Test Condition
600V, 25A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
4V @ 15V, 60A
IGBT Type
NPT
Gate Charge
169nC
Current - Collector Pulsed (Icm)
120A
Switching Energy
1.07mJ (on), 1.49mJ (off)
Height
20.701mm
Length
15.875mm
Width
5.3086mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRGP30B120KDPBF Product Details
IRGP30B120KDPBF Description
IRGP30B120KDPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP30B120KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.