IRGP4066D-EPBF

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Manufacturer part number:IRGP4066D-EPBF

Manufacturer:Infineon Technologies

Description:IRGP4066D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4066D-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	454W
Number of Elements	1
Rise Time-Max	90ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	50 ns
Power - Max	454W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	200 ns
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	140A
Reverse Recovery Time	155 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	120 ns
Test Condition	400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	Trench
Gate Charge	150nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	50ns/200ns
Switching Energy	2.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	80ns
Height	20.7mm
Length	15.87mm
Width	5.13mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free