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SIGC18T60SNCX1SA3

SIGC18T60SNCX1SA3

SIGC18T60SNCX1SA3

Infineon Technologies

SIGC18T60SNCX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC18T60SNCX1SA3 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2016
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code S-XUUC-N2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 20A
Turn On Time 66 ns
Test Condition 400V, 20A, 16 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 313 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 36ns/250ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC18T60SNCX1SA3 Product Details

SIGC18T60SNCX1SA3 Description

 

SIGC18T60SNCX1SA3 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC18T60SNCX1SA3 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

SIGC18T60SNCX1SA3 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

SIGC18T60SNCX1SA3 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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