IRG7S313UTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7S313UTRLPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Packaging
Cut Tape (CT)
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
78W
Base Part Number
IRG7S313UPBF
Element Configuration
Dual
Power Dissipation
78W
Input Type
Standard
Power - Max
78W
Rise Time
13ns
Fall Time (Typ)
68 ns
Collector Emitter Voltage (VCEO)
2.14V
Max Collector Current
40A
Collector Emitter Breakdown Voltage
330V
Voltage - Collector Emitter Breakdown (Max)
330V
Current - Collector (Ic) (Max)
40A
Max Breakdown Voltage
330V
Test Condition
196V, 12A, 10Ohm
Vce(on) (Max) @ Vge, Ic
2.14V @ 15V, 60A
IGBT Type
Trench
Gate Charge
33nC
Td (on/off) @ 25°C
1ns/65ns
Height
4.7244mm
Length
16.0782mm
Width
24.3078mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.348320
$1.34832
10
$1.272000
$12.72
100
$1.200000
$120
500
$1.132075
$566.0375
1000
$1.067996
$1067.996
IRG7S313UTRLPBF Product Details
IRG7S313UTRLPBF Description
IRG7S313UTRLPBF is a type of IGBT designed based on advanced trench IGBT technology, showing low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. It is specifically optimized for applications in Plasma Display Panels. It is a highly efficient, robust and reliable device for sustain and energy recovery circuits in PDP applications based on its 150°C operating junction temperature and high repetitive peak current capability.
IRG7S313UTRLPBF Features
Advanced trench IGBT technology
High repetitive peak current capability
150°C operating junction temperature
low VCE(on) and low EPULSETM rating per silicon area