IRG7S313UTRLPBF Description
IRG7S313UTRLPBF is a type of IGBT designed based on advanced trench IGBT technology, showing low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. It is specifically optimized for applications in Plasma Display Panels. It is a highly efficient, robust and reliable device for sustain and energy recovery circuits in PDP applications based on its 150°C operating junction temperature and high repetitive peak current capability.
IRG7S313UTRLPBF Features
Advanced trench IGBT technology
High repetitive peak current capability
150°C operating junction temperature
low VCE(on) and low EPULSETM rating per silicon area
Package: D2Pak
IRG7S313UTRLPBF Applications
PDP applications
Applications in Plasma Display Panels
