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IRG7S313UTRLPBF

IRG7S313UTRLPBF

IRG7S313UTRLPBF

Infineon Technologies

IRG7S313UTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7S313UTRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Packaging Cut Tape (CT)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 78W
Base Part Number IRG7S313UPBF
Element Configuration Dual
Power Dissipation 78W
Input Type Standard
Power - Max 78W
Rise Time 13ns
Fall Time (Typ) 68 ns
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 330V
Voltage - Collector Emitter Breakdown (Max) 330V
Current - Collector (Ic) (Max) 40A
Max Breakdown Voltage 330V
Test Condition 196V, 12A, 10Ohm
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 60A
IGBT Type Trench
Gate Charge 33nC
Td (on/off) @ 25°C 1ns/65ns
Height 4.7244mm
Length 16.0782mm
Width 24.3078mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.348320 $1.34832
10 $1.272000 $12.72
100 $1.200000 $120
500 $1.132075 $566.0375
1000 $1.067996 $1067.996
IRG7S313UTRLPBF Product Details

IRG7S313UTRLPBF Description


IRG7S313UTRLPBF is a type of IGBT designed based on advanced trench IGBT technology, showing low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. It is specifically optimized for applications in Plasma Display Panels. It is a highly efficient, robust and reliable device for sustain and energy recovery circuits in PDP applications based on its 150°C operating junction temperature and high repetitive peak current capability.



IRG7S313UTRLPBF Features


Advanced trench IGBT technology

High repetitive peak current capability

150°C operating junction temperature

low VCE(on) and low EPULSETM rating per silicon area

Package: D2Pak



IRG7S313UTRLPBF Applications


PDP applications

Applications in Plasma Display Panels


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