IRG4PC50F-EPBF

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Manufacturer part number:IRG4PC50F-EPBF

Manufacturer:Infineon Technologies

Description:IRG4PC50F-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PC50F-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	31 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	240 ns
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	70A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Gate to Source Voltage (Vgs)	20V
Collector Emitter Saturation Voltage	1.45V
Turn On Time	52 ns
Test Condition	480V, 39A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 39A
Turn Off Time-Nom (toff)	620 ns
Gate Charge	190nC
Current - Collector Pulsed (Icm)	280A
Td (on/off) @ 25°C	31ns/240ns
Switching Energy	370μJ (on), 2.1mJ (off)
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	190ns
Height	20.701mm
Length	15.875mm
Width	5.3086mm
Radiation Hardening	No
RoHS Status	RoHS Compliant