STGB20M65DF2 Description

STGB20M65DF2 is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the efficiency of very high-frequency converters. Safer paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.

STGB20M65DF2 Features

Advanced proprietary trench gate and field stop structure

Low conduction and switching losses

Positive VCE(sat) temperature coefficient 

Very tight parameter distribution

Package:  D2PAK

STGB20M65DF2 Applications

Motor control

UPS

PFC

General-purpose inverters