IRG4PH40KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PH40KPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
160W
Current Rating
30A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Rise Time
22ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3.4V
Max Collector Current
30A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.74V
Turn On Time
53 ns
Test Condition
960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 15A
Turn Off Time-Nom (toff)
1200 ns
Gate Charge
94nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
30ns/200ns
Switching Energy
730μJ (on), 1.66mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
20.701mm
Length
15.875mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.261120
$4.26112
10
$4.019925
$40.19925
100
$3.792382
$379.2382
500
$3.577719
$1788.8595
1000
$3.375206
$3375.206
IRG4PH40KPBF Product Details
IRG4PH40KPBF Description
The IRG4PH40KPBF is a 1200V short-circuit rated Discrete (Insulated Gate Bipolar Transistor) IGBT provides tighter parameter distribution and higher efficiency than previous generations. It combines low induction losses with high switching speed. As a freewheeling diode, HEXFRED? ultrafast, ultrasoft recovery diodes are recommended for minimum EMI/noise and switching losses in the diode and IGBT. IRG4PH40KPBF Features
● Combines low conduction losses with high switching speed ● Tighter parameter distribution and higher efficiency than previous generations ● IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes ● Lead-Free ● Latest generation 4 IGBT's offer highest power density motor controls possible ● HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses ● For hints see design tip 97003 IRG4PH40KPBF Applications
● New energy vehicle ● Photovoltaic & wind power generation ● The smart grid ● Motor Control