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IRG4PH40KPBF

IRG4PH40KPBF

IRG4PH40KPBF

Infineon Technologies

IRG4PH40KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IRG4PH40KPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 160W
Current Rating 30A
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 22ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.4V
Max Collector Current 30A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.74V
Turn On Time 53 ns
Test Condition 960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Turn Off Time-Nom (toff) 1200 ns
Gate Charge 94nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 30ns/200ns
Switching Energy 730μJ (on), 1.66mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.701mm
Length 15.875mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.261120 $4.26112
10 $4.019925 $40.19925
100 $3.792382 $379.2382
500 $3.577719 $1788.8595
1000 $3.375206 $3375.206
IRG4PH40KPBF Product Details
IRG4PH40KPBF Description

The IRG4PH40KPBF is a 1200V short-circuit rated Discrete (Insulated Gate Bipolar Transistor) IGBT provides tighter parameter distribution and higher efficiency than previous generations. It combines low induction losses with high switching speed. As a freewheeling diode, HEXFRED? ultrafast, ultrasoft recovery diodes are recommended for minimum EMI/noise and switching losses in the diode and IGBT.
IRG4PH40KPBF Features

● Combines low conduction losses with high switching speed
● Tighter parameter distribution and higher efficiency than previous generations
● IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
● Lead-Free
● Latest generation 4 IGBT's offer highest power density motor controls possible
● HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
● For hints see design tip 97003
IRG4PH40KPBF Applications

● New energy vehicle
● Photovoltaic & wind power generation
● The smart grid
● Motor Control

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