IXGA42N30C3

new-10%

Manufacturer part number:IXGA42N30C3

Manufacturer:IXYS

Description:IGBT 300V 223W TO263AA

Case Package:SOT-23

Datasheet:IXGA42N30C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	223W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.85V
Max Collector Current	42A
Collector Emitter Breakdown Voltage	300V
Turn On Time	43 ns
Test Condition	200V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 42A
Turn Off Time-Nom (toff)	229 ns
IGBT Type	PT
Gate Charge	76nC
Current - Collector Pulsed (Icm)	250A
Td (on/off) @ 25°C	21ns/113ns
Switching Energy	120μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	120ns
RoHS Status	ROHS3 Compliant